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  Datasheet File OCR Text:
 SMD Type
PNP Epitaxial Planar Silicon 2SA1898
Features
Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed.
Transistors IC
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -15 -15 -5 -3 -5 -600 1.3 150 -55 to +150 Unit V V V A A mA W
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1
SMD Type
2SA1898
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Symbol IcBO IEBO hFE fT Cob Testconditons VCB = -12V , IE = 0 VEB = -3V , IC = 0 VCE = -2V , IC = -0.5A VCE = -2V , IC = -0.3A VCB = -10V , f = 1MHz
Transistors IC
Min
Typ
Max -1 -1
Unit nA nA
100 300 28 -0.25 -0.95 -15 -15 -5 30
280 MHz pF -0.5 -1.2 mV V V V V 60 ns
VCE(sat) IC = -1.5A , IB =-75mA VBE(sat) IC = -1.5A , IB =-75mA V(BR)CBO IC = -10iA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10iA , IC = 0 ton
Storage time
tstg
100
200
ns
Turn-off time
toff
120
220
ns
hFE Classification
Marking Rank hFE R 100 200 AN S 140 280
2
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